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R1RW0416DSB-2PR-D1

Series Days to Ship

Specification/Dimensions

Series
- L-Version
- Normal
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6 Day(s) or Less

98 Day(s) or Less
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R1RW0416D-R 4M High-speed SRAM (256-kword × 16-bit) (R1RW0416DSB-2PR-D1)

Name: R1RW0416D-R 4M High-speed SRAM (256-kword × 16-bit)
Brand: RENESAS
Price: 1747.46 THB
Availability: PreOrder

MEMORIES

R1RW0416D-R 4M High-speed SRAM (256-kword × 16-bit) (R1RW0416DSB-2PR-D1)

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RENESAS

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Product Description

The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

Part Numbers

: 30; 60; 90

Part Number
R1RW0416DSB-2PR-D1

Part Number	Price	Name	Minimum Order Qty.	Volume Discount	Days to Ship	Series
	฿ 1,747.46	MEMORIES	1 Piece(s)		6 Day(s)	Normal

Basic Information

Supply Voltage	3.3V ± 0.3V	Package Type	TSOP(44)	Access time	12ns
Cmos Standby Current	5mA (max) 0.8mA (max) (L-version) 0.5mA (max) (S-version)	Data Retention Current	0.4mA (max) (L-version) 0.2mA (max) (S-version)	Carrier Type	Tray
Data Retention Voltage	2.0V (min) (L-version , S-version)